Boron-based Semiconductors
Boron has one of the highest capture cross-sections for thermal neutrons and therefore shows good potential when used in neutron detectors. Whilst there has been extensive research exploring the use of boron coated Si-based devices as neutron detectors, we approach the use of the material from a different angle. Our research focuses on boron containing semiconductor active devices, such as B-Al-Mg or B-N or B-As based pn junctions and transistors, and explores their use as neutron detectors. This research involves materials studies to characterize some of the novel compounds ultimately helping the fabrication of devices.
Figure 1. Crystal structure of B12As2 with B12 icosahedra residing at the lattice points of a rhombohedral unit cell and As - As along the body diagonal
Figure 2. Indexed transmission synchrotron x-ray Laue diffraction pattern from B12As2 film grown on 0001 plane 6H–SiC