Center for Device Thermography and Reliability
Probing RF properties of GaN-based devices
The Center for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball is a world-leading research center focusing on improving the thermal management, electrical performance and reliability of novel devices, circuits and packaging.
Why do we exist?
In today's fast-moving technological world, semiconductor devices need more ‘muscle power’, but devices must not overheat.
It is projected that the next generation of wireless architecture (5G) will increase data communciation speeds to multiple times that of existing 4G. Semiconductors enable this wireless architecture. Today's devices run too hot, wasting energy and giving them a short operating life time.
Furthermore, if we use today’s technology, by 2035 the planet’s datacentres will cover 6 x the land area of the M25 and use over 40% of global energy production.
To achieve this goal, since 2001 we have been developing and applying new techniques for temperature, thermal conductivity, electrical conductivity and traps analysis, especially for microwave and power electronic semiconductor devices, made of wide bandgap materials, such as GaN, SiC, Gallium Oxide and diamond. Our team of about 20 international researchers and PhD students works with industry and academia from across the globe to develop the next generation of technology for communications, microwave and power electronics to enable the low carbon economy.
GaN on diamond technology, the next generation technology which will underpin future high power RF and microwave communications and radar systems.
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