Publications

Analysis of Instability of Dynamic On-Resistance in p-GaN eHEMTs by Hot-Electron-Stress
Wang X et al., 2026, 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Institute of Electrical and Electronics Engineers (IEEE) 10.1109/EDTM65772.2026.11495579
Closed-Loop Temperature-Controlled Power Cycling for Accelerated Degradation Monitoring of GaN Devices
Leung T et al., 1 Aug 2026, In: IEEE Transactions on Power Electronics, vol 41, no 8 10.1109/TPEL.2026.3671968
Comparative Analysis of Transient Characteristics of Gate Driver Topologies in Paralleled Silicon Carbide Power Modules
Li Y et al., 9 May 2026, In: IET Power Electronics, vol 19, no 1 10.1049/pel2.70242
Comparison of Machine Learning Techniques for Analysing Wide Bandgap Switching Behavior and EMI in Half-Bridge Structures
Rajkumar T et al., 2026, The 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 -ECCE Asia-), Institute of Electrical and Electronics Engineers (IEEE) 10.23919/IPEC-Nagasaki2026-EC64663.2026.11597184
Correlations Between Body Diode Pulsed Overcurrent Safe Operating Area, Short Circuit, and Avalanche Ruggedness in SiC MOSFETs
Ayala H et al., 1 Jun 2026, In: IEEE Transactions on Electron Devices, vol 73, no 6 10.1109/TED.2026.3671746
Cross-platform J-A Modelling for High Temperature Superconducting Applications with Nonlinear Ferromagnetic Materials
Zhu H et al., 3 Mar 2026, In: Superconductor Science and Technology, vol 39, no 3 10.1088/1361-6668/ae482f
Deriving Occurrence Variability in Fatigue Critical Turning Manoeuvres for Landing Gear Design from Air Traffic Data
Hoole J et al., 9 Mar 2026, In: Aerospace, vol 13, no 3 10.3390/aerospace13030257
Electrical Conductivity Measurement of Additively Manufactured Components
Ermakova A et al., 3 Feb 2026, In: IEEE Transactions on Industry Applications 10.1109/TIA.2026.3660797
Electricity access in the Brazilian Amazon
dos Santos Cacpietra R et al., 1 Aug 2026, In: Energy for Sustainable Development, vol 93 10.1016/j.esd.2026.102039
Electro-thermal Stability of Planar, Trench & Double-Trench 4H-SiC MOSFETs in Linear Mode Operation
Liu Y et al., 2026, 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 - ECCE Asia), Institute of Electrical and Electronics Engineers (IEEE) 10.23919/IPEC-Nagasaki2026-EC64663.2026.11597330
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