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Dr Harry Dymond

Dr Harry Dymond

Dr Harry Dymond
MEng(Bristol), PhD(Bristol)

Senior Research Associate in Power Electronics

Area of research

Advanced gate driving of GaN devices

Office 1.9 Queen's Building
Queen's Building,
University Walk, Bristol BS8 1TR
(See a map)

Tel. +44 (0) 117 39 40289

Research summary

Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.

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Recent publications

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View complete publications list in the University of Bristol publications system

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