Mr Chengzhi Zhang
Bs, M.Eng
Current positions
Honorary Research Associate
School of Physics
Contact
Press and media
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Publications
Recent publications
29/10/2026Dislocation-controlled reverse leakage and temperature-dependent transport in quasi-vertical GaN-on-Si Schottky barrier diodes
Journal of Physics D: Applied Physics
Vertical GaN-on-GaN finFETs: Effect of SiNx Spacer Layer on Breakdown Voltage and Device Stability Under Gate Bias Stress
IEEE Transactions on Electron Devices
Vertical GaN Schottky barrier diodes: Impact of device dimensions and micro-masking on mesa edge termination
Applied Physics Letters
N-polar AlN-based enhancement-mode transistor with p-NiOx gate stacks and reduced buffer trapping
Journal of Physics D: Applied Physics
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