
Professor Michael Uren
PhD, BA
Current positions
Honorary Professor
School of Physics
Contact
Press and media
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Research interests
Wide bandgap microwave and high power field effect transistors. In particular gallium nitride based device operation, reliability and modelling.
Projects and supervisions
Thesis supervisions
Microstructural buffer effects in AlGaN/GaN high electron mobility transistors
Supervisors
Electrical and Thermal Characterisation of GaN-based Devices for RF and Power Electronics
Supervisors
Electrical optimization of AlGaN/GaN devices for power and RF applications
Supervisors
Electrical and thermal characterisation of β-Ga2O3 devices
Supervisors
Publications
Recent publications
22/05/2025Gallium nitride multichannel devices with latch-induced sub-60 millivolt per decade subthreshold slope for radiofrequency applications
Nature Electronics
Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements
Journal of Applied Physics
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Applied Physics Letters
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs
2023 IEEE International Reliability Physics Symposium (IRPS)