Wide bandgap devices based on SiC and GaN can switch extremely fast, e.g., current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, which significantly promotes the development of high-speed power electronics and leads to higher efficiency. However, a challenge in suppressing excessive overshoots, ringing, EMI, etc, is also introduced. I am interested in developing advanced sensors and gate driving techniques to visualize the fast transitions and “quieten down” the switching process of wide bandgap power transistors. Meanwhile, I am also interested in developing high-voltage pulsed power generators based on solid-state or gas-discharge devices, as well as their applications in plasma driving, electric propulsion, advanced sensors, etc.