
Dr James Pomeroy
M.Sc.(Bristol), Ph.D.(Bristol)
Expertise
Working at the intersection of thermal management, semiconductor reliability, and advanced optical characterization techniques applied to develop more efficient, reliable, and high-power electronic devices.
Current positions
Research Fellow in Thermal Materials and Device Research
School of Physics
Contact
Press and media
Many of our academics speak to the media as experts in their field of research. If you are a journalist, please contact the University’s Media and PR Team:
Biography
Dr. Pomeroy completed his M.Sc. (2002) and Ph.D. degrees (2006) at University of Bristol, and has 20 years experience in advanced thermography, thermal management and device cahracterisation. He is a member of the REWIRE Innovation and Knowledge Centre academic team. He has successfully delivered contributions to several international reserach programmes including ESA, Darpa, European Commision, EDA, and regularly consults for leading semiconductor companies.
Research interests
My research is focused on thermal characterisation and thermal management of high power RF and power conveter electronic devices. I have extensive expertise in semiconductor device simulation, design and construction of optical-based instruments, and applying advanced characterisation techniques.
Key Research Interests
-
Advanced Thermography: incuding Raman thermography, using lasers to map "hot spots" inside transistors with sub-micron precision and nanosecond temporal resolution. Working on the developement of super-resolution thermal imaging.
-
Wide and ultra-wide Bandgap semiconductors like Gallium Nitride (GaN), AlGaN and Ga2O3 , which are essential for 5G/6G and electric vehicles.
-
Thermal management: A major focus on GaN-on-Diamond technology—joing semiconductors to diamond substrates to dissipate heat more efficiently. Improving thermal boundary resistances between epitaxial layers and substrates, thermal interface materials and adanced heat spreaders including metal/diamond composites.
-
Device Reliability: Studying the physical causes of device failure, such as electric field stress and thermal boundary resistance at material interfaces. Applying techniques such as electric field induced second harmonic generation (EFISHG) and electrolumensce microscosopy/spectroscopy.
Projects and supervisions
Thesis supervisions
Development of a frequency-domain thermoreflectance instrument for thermal characterization of diamond-based composites
Supervisors
Heterogenous integration of Heatsinks with electronic devices
Supervisors
Optimisation of low-dimensional materials for thermal management applications and novel passivation layers in devices
Supervisors
Electric field mapping in GaN based wide-bandgap semiconductor devices
Supervisors
Novel Scintillator Development for High Rate Capability Neutron Scattering Detectors
Supervisors
Material properties of gallium oxides
Supervisors
Publications
Recent publications
30/06/2025Opportunities for Wide and Ultrawide Bandgap Devices with Heterogenous Integration
9th IEEE Electron Devices Technology and Manufacturing Conference
Breakdown-induced directional cracking in kilovolt-class β-Ga2O3 (001) vertical trench Schottky barrier diodes
Applied Physics Letters
Buffer‐Less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Advanced Materials
Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications
Nature Electronics
Impact of AlGaN Back Barrier on the Thermal Resistance of RF HEMTs
IEEE Electron Device Letters

