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Publication - Professor Martin Kuball

    Room-temperature Direct bonding of Diamond and Al for heat sink application

    Citation

    Kuball, M, Liang, J, Yamajo, S & Shigekawa, N, 2018, ‘Room-temperature Direct bonding of Diamond and Al for heat sink application’. Scripta Materialia.

    Abstract

    The direct bonding of diamond and Al substrates was achieved by surface activated bonding at room temperature. The interfacial structure of the Diamond/Al bonding interface with annealing at different temperatures was investigated by In-situ annealing TEM observation in a high vacuum. An amorphous layer with a thickness of about 4 nm was formed at the bonding interface without annealing, the thickness of the amorphous layer decreased with increasing annealing temperature, the amorphous layer vanished after annealing at 600 °C. No structural defects were observed at the bonding interface with annealing at different temperatures. The sp2/(sp2 + sp3) ratio estimated from the X-ray photoemission spectra increased from 3.4 % to 26.6 % after the irradiation of Ar fast beam and decreased from 26.6 % to 1.2 % after annealing at 600 °C, which should be predominantly attributable to the diamond-graphite conversion.

    Full details in the University publications repository