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Ms Nicole Killat
Ms Nicole Killat
Area of research
Reliability of GaN-based devices
My research is based on the investigation of degradation mechanisms in AlGaN/GaN High Electron Mobility Transistors (HEMTs) using optical and electrical techniques. The experimental approach combines Raman thermography, electroluminescence spectroscopy, and electrical device stress as well as characterisation.
Nicole Killat received the Dipl.-Ing. degree in technical physics from the Ilmenau University of Technology, Germany, in 2008. She is currently working towards the Ph.D. degree at the Applied Spectroscopy Group, Universtity of Bristol.
Second year lab demonstrator in the School of Physics in 2009-2012
School of Physics
Postgrads by research group
- Silvestri, M, Uren, MJ, Killat, N, Marcon, D & Kuball, M 2013, Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements. Applied Physics Letters, vol 103.
- Killat, N, Bajo, MM, Paskova, T, Evans, KR, Leach, J, Li, X, Oezguer, U, Morkoc, H, Chabak, KD, Crespo, A, Gillespie, JK, Fitch, R, Kossler, M, Walker, DE, Trejo, M, Via, GD, Blevins, JD & Kuball, M 2013, Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters, vol 103.
- Killat, N, Uren, MJ, Wallis, DJ, Martin, T & Kuball, M 2012, Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping. Applied Physics Letters, vol 101., pp. 153505
- Hodges, CJ, Killat, N, Kaun, SW, Wong, MH, Gao, F, Palacios, T, Mishra, UK, Speck, JS, Wolverson, D & Kuball, M 2012, Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: generation of non-radiative recombination centers. Applied Physics Letters, vol 100., pp. 112106
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