Professor Martin Kuball

Latest publications

• Singh, M, Karboyan, S, Uren, MJ, Lee, KB, Zaidi, Z, Houston, PA & Kuball, M, 2019, ‘Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers’. Microelectronics Reliability, vol 95., pp. 81-86
• Middleton, C, Chandrasekar, H, Singh, M, Pomeroy, JW, Uren, MJ, Francis, D & Kuball, M, 2019, ‘Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices’. Applied Physics Express, vol 12.
• Chauhan, P, Hasenöhrl, S, Dobročka, E, Chauvat, MP, Minj, A, Gucmann, F, Vančo, &#x, Ko;váč, J, Jr., Kret, S, Ruterana, P, Kuball, M, Šiffalovič, P & Kuzmík, J, 2019, ‘Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD’. Journal of Applied Physics, vol 125.
• Zhou, Y, Gucmann, F, Manikant, M, Pomeroy, J & Kuball, M, 2019, ‘Annealing effect of surface-activated bonded diamond/Si interface’. Diamond and Related Materials.
• Yuan, C, Li, J, Lindsay, L, Cherns, D, Pomeroy, J, Liu, S, Edgar, JH & Kuball, MHH, 2019, ‘Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration’. Communications Physics, vol 2.
• Chandrasekar, H, Uren, M, Casbon, MA, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M, 2019, ‘Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology’. IEEE Transactions on Electron Devices, vol 66., pp. 1681-1687
• Pomeroy, JW, Middleton, C, Singh, M, Dalcanale, S, Uren, MJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2019, ‘Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs’. IEEE Electron Device Letters, vol 40., pp. 189-192
• Liang, J, Yamajo, S, Kuball, M & Shigekawa, N, 2019, ‘Room-temperature direct bonding of diamond and Al’. Scripta Materialia, vol 159., pp. 58-61
• Rackauskas, B, Uren, M, Kachi, T & Kuball, M, 2019, ‘Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes’. Microelectronics Reliability, vol 95., pp. 48-51
• Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, PR, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, MM, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, JJ, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, KB, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A & others 2018, ‘The 2018 GaN power electronics roadmap’. Journal of Physics D: Applied Physics, vol 51.