Professor Martin Kuball

Latest publications

• Chandrasekar, H, Uren, M, Casbon, MA, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M, 2019, ‘Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology’. IEEE Transactions on Electron Devices, vol 66., pp. 1681-1687
• Rackauskas, B, Uren, M, Kachi, T & Kuball, M, 2019, ‘Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes’. Microelectronics Reliability, vol 95., pp. 48-51
• Pomeroy, JW, Middleton, C, Singh, M, Dalcanale, S, Uren, MJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2019, ‘Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs’. IEEE Electron Device Letters, vol 40., pp. 189-192
• Liang, J, Yamajo, S, Kuball, M & Shigekawa, N, 2019, ‘Room-temperature direct bonding of diamond and Al’. Scripta Materialia, vol 159., pp. 58-61
• Singh, M, Casbon, MA, Uren, MJ, Pomeroy, JW, Dalcanale, S, Karboyan, S, Tasker, PJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2018, ‘Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs’. IEEE Electron Device Letters, vol 39., pp. 1572-1575
• Rackauskas, B, Dalcanale, S, Uren, MJ, Kachi, T & Kuball, M, 2018, ‘Leakage mechanisms in GaN-on-GaN vertical pn diodes’. Applied Physics Letters, vol 112.
• Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, PR, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, MM, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, JJ, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, KB, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A & others 2018, ‘The 2018 GaN power electronics roadmap’. Journal of Physics D: Applied Physics, vol 51.
• Hirshy, H, Singh, M, Casbon, MA, Perks, RM, Uren, MJ, Martin, T, Kuball, M & Tasker, PJ, 2018, ‘Evaluation of Pulsed I-V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs’. IEEE Transactions on Electron Devices, vol 65., pp. 5307-5313
• Manikant, Karboyan, S, Uren, MJ, Lee, KB, Zaidi, Z, Houston, PA & Kuball, M, 2018, ‘Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs’.
• Yates, L, Anderson, J, Gu, X, Lee, C, Bai, T, Mecklenburg, M, Aoki, T, Goorsky, MS, Kuball, M, Piner, EL & Graham, S, 2018, ‘Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices’. ACS Applied Materials and Interfaces, vol 10., pp. 24302-24309