Professor Martin Kuball

Latest publications

• Yuan, C, Li, J, Lindsay, L, Cherns, D, Pomeroy, JW, Liu, S, Edgar, JH & Kuball, M, 2019, ‘Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration’. Communications Physics, vol 2.
• Singh, M, Karboyan, S & Kuball, MHH, 2019, ‘Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors’. Journal of Physics D: Applied Physics, vol 52.
• Middleton, C, Dalcanale, S, Uren, M, Pomeroy, J, Uren, MJ, Chang, J, Parke, J, Wathuthanthri, I, Nagamatsu, K, Salaru, S & Kuball, M, 2019, ‘Thermal transport in Superlattice Castellated Field Effect Transistors’. IEEE Electron Device Letters, vol 40., pp. 1374-1377
• Kuball, MHH, Pomeroy, JW, Middleton, CJ & Gucmann, F, 2019, ‘HIGH EFFICIENCY ALN/GAN HEMTS FOR Q-BAND APPLICATIONS WITH AN IMPROVED THERMAL DISSIPATION’. International Journal of High Speed Electronics and Systems.
• Middleton, C, Chandrasekar, H, Singh, M, Pomeroy, JW, Uren, MJ, Francis, D & Kuball, M, 2019, ‘Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices’. Applied Physics Express, vol 12.
• Pomeroy, JW, Middleton, C, Singh, M, Dalcanale, S, Uren, MJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2019, ‘Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs’. IEEE Electron Device Letters, vol 40., pp. 189-192
• Chandrasekar, H, Uren, M, Casbon, MA, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M, 2019, ‘Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology’. IEEE Transactions on Electron Devices, vol 66., pp. 1681-1687
• Liu, D & Kuball, M, 2019, ‘On the characterisation of the interfacial toughness in a novel “GaN-on-Diamond” material for high-power RF devices’. ACS Applied Electronic Materials.
• Jiang, S, Lee, KB, Zaidi, ZH, Uren, MJ, Kuball, M & Houston, PA, 2019, ‘Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors’. IEEE Transactions on Electron Devices, vol 66., pp. 1688-1693
• Chauhan, P, Hasenöhrl, S, Dobročka, E, Chauvat, MP, Minj, A, Gucmann, F, Vančo, &#x, Ko;váč, J, Jr., Kret, S, Ruterana, P, Kuball, M, Šiffalovič, P & Kuzmík, J, 2019, ‘Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD’. Journal of Applied Physics, vol 125.