Professor Martin Kuball

Latest publications

• Rackauskas, B, Uren, MJ, Stoffels, S, Zhao, M, Decoutere, S & Kuball, M, 2018, ‘Determination of the self-compensation ratio of carbon in AlGaN for HEMTs’. IEEE Transactions on Electron Devices, vol 65., pp. 1838-1842
• Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, PR, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, MM, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, JJ, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, KB, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A & others 2018, ‘The 2018 GaN power electronics roadmap’. Journal of Physics D: Applied Physics, vol 51.
• Rackauskas, B, Uren, MJ, Stoffels, S, Zhao, M, Bakeroot, B, Decoutere, S & Kuball, M, 2018, ‘The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown’. IEEE Electron Device Letters, vol 39., pp. 1580-1583
• Butler, PA, Uren, MJ, Lambert, B & Kuball, M, 2018, ‘Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients’. IEEE Transactions on Nuclear Science, vol 65., pp. 2862-2869
• Singh, M, Uren, M, Martin, T, Karboyan, S, Chandrasekar, H & Kuball, M, 2018, ‘'Kink' in AlGaN/GaN-HEMTs: Floating buffer model’. IEEE Transactions on Electron Devices, vol 65., pp. 3746-3753
• Waller, WM, Gajda, M, Pandey, S, Uren, MJ & Kuball, M, 2018, ‘Lateral Charge Distribution and Recovery of Dynamic R_ON in AlGaN/GaN HEMTs’. IEEE Transactions on Electron Devices, vol 65., pp. 4462-4468
• Chandrasekar, H, Uren, MJ, Eblabla, A, Hirshy, H, Casbon, MA, Tasker, PJ, Elgaid, K & Kuball, M, 2018, ‘Buffer Induced Current-Collapse in GaN HEMTs on Highly Resistive Si Substrates’. IEEE Electron Device Letters, vol 39., pp. 1556-1559
• Yuan, C, Pomeroy, JW & Kuball, M, 2018, ‘Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers’. Applied Physics Letters, vol 113.
• Yuan, C, Pomeroy, JW & Kuball, M, 2018, ‘Non-invasive Thermal Resistance Measurement for GaN Wafer Process Control and Optimization’. in: 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm 2018) : Proceedings of a meeting held 29 May - 1 June 2018, San Diego, California, USA. Institute of Electrical and Electronics Engineers (IEEE), pp. 256-261
• Singh, M, Casbon, MA, Uren, MJ, Pomeroy, JW, Dalcanale, S, Karboyan, S, Tasker, PJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2018, ‘Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs’. IEEE Electron Device Letters, vol 39., pp. 1572-1575