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Professor Martin Kuball
Latest publications
- Yuan, C, Li, J, Lindsay, L, Cherns, D, Pomeroy, JW, Liu, S, Edgar, JH & Kuball, M, 2019, Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration. Communications Physics, vol 2.
- Singh, M, Karboyan, S & Kuball, MHH, 2019, Atomic layer deposited α-Ga2O3 solar-blind photodetectors. Journal of Physics D: Applied Physics, vol 52.
- Middleton, C, Dalcanale, S, Uren, M, Pomeroy, J, Uren, MJ, Chang, J, Parke, J, Wathuthanthri, I, Nagamatsu, K, Salaru, S & Kuball, M, 2019, Thermal transport in Superlattice Castellated Field Effect Transistors. IEEE Electron Device Letters, vol 40., pp. 1374-1377
- Kuball, MHH, Pomeroy, JW, Middleton, CJ & Gucmann, F, 2019, HIGH EFFICIENCY ALN/GAN HEMTS FOR Q-BAND APPLICATIONS WITH AN IMPROVED THERMAL DISSIPATION. International Journal of High Speed Electronics and Systems.
- Middleton, C, Chandrasekar, H, Singh, M, Pomeroy, JW, Uren, MJ, Francis, D & Kuball, M, 2019, Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices. Applied Physics Express, vol 12.
- Pomeroy, JW, Middleton, C, Singh, M, Dalcanale, S, Uren, MJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2019, Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs. IEEE Electron Device Letters, vol 40., pp. 189-192
- Chandrasekar, H, Uren, M, Casbon, MA, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M, 2019, Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology. IEEE Transactions on Electron Devices, vol 66., pp. 1681-1687
- Liu, D & Kuball, M, 2019, On the characterisation of the interfacial toughness in a novel “GaN-on-Diamond” material for high-power RF devices. ACS Applied Electronic Materials.
- Jiang, S, Lee, KB, Zaidi, ZH, Uren, MJ, Kuball, M & Houston, PA, 2019, Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors. IEEE Transactions on Electron Devices, vol 66., pp. 1688-1693
- Chauhan, P, Hasenöhrl, S, Dobročka, E, Chauvat, MP, Minj, A, Gucmann, F, Vančo, , Ko;váč, J, Jr., Kret, S, Ruterana, P, Kuball, M, Šiffalovič, P & Kuzmík, J, 2019, Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied Physics, vol 125.
View complete publications list in the University of Bristol publications system