Professor Martin Kuball

Latest publications

• Liu, D & Kuball, M, 2019, ‘On the characterisation of the interfacial toughness in a novel “GaN-on-Diamond” material for high-power RF devices’. ACS Applied Electronic Materials.
• Pomeroy, JW, Middleton, C, Singh, M, Dalcanale, S, Uren, MJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2019, ‘Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs’. IEEE Electron Device Letters, vol 40., pp. 189-192
• Middleton, C, Dalcanale, S, Uren, M, Pomeroy, J & Kuball, M, 2019, ‘Thermal transport in Superlattice Castellated Field Effect Transistors’. IEEE Electron Device Letters., pp. 1-4
• Liang, J, Yamajo, S, Kuball, M & Shigekawa, N, 2019, ‘Room-temperature direct bonding of diamond and Al’. Scripta Materialia, vol 159., pp. 58-61
• Ouachan, I, Kuball, M, Liu, D, Dyer, K, Ward, C & Hamerton, I, 2019, ‘Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modification’. in: WindEurope Conference and Exhibition 2019: Delivering a Clean Economy for All European: Proceedings of a meeting held 2-4 April 2019, Bibao, Spain.
• Middleton, C, Chandrasekar, H, Singh, M, Pomeroy, JW, Uren, MJ, Francis, D & Kuball, M, 2019, ‘Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices’. Applied Physics Express, vol 12.
• Singh, M, Karboyan, S, Uren, MJ, Lee, KB, Zaidi, Z, Houston, PA & Kuball, M, 2019, ‘Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers’. Microelectronics Reliability, vol 95., pp. 81-86
• Rackauskas, B, Uren, M, Kachi, T & Kuball, M, 2019, ‘Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes’. Microelectronics Reliability, vol 95., pp. 48-51
• Yuan, C, Li, J, Lindsay, L, Cherns, D, Pomeroy, J, Liu, S, Edgar, JH & Kuball, MHH, 2019, ‘Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration’. Communications Physics, vol 2.
• Chauhan, P, Hasenöhrl, S, Dobročka, E, Chauvat, MP, Minj, A, Gucmann, F, Vančo, &#x, Ko;váč, J, Jr., Kret, S, Ruterana, P, Kuball, M, Šiffalovič, P & Kuzmík, J, 2019, ‘Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD’. Journal of Applied Physics, vol 125.