Browse/search for people

Publication - Professor Martin Kuball

    Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

    Citation

    Manikant, Karboyan, S, Uren, MJ, Lee, KB, Zaidi, Z, Houston, PA & Kuball, M, 2018, ‘Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs’.

    Abstract

    Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.

    Full details in the University publications repository