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Publication - Professor Martin Kuball

    Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

    Citation

    Singh, M, Casbon, MA, Uren, MJ, Pomeroy, JW, Dalcanale, S, Karboyan, S, Tasker, PJ, Wong, MH, Sasaki, K, Kuramata, A, Yamakoshi, S, Higashiwaki, M & Kuball, M, 2018, ‘Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs’. IEEE Electron Device Letters, vol 39., pp. 1572-1575

    Abstract

    Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

    Full details in the University publications repository