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Publication - Professor Martin Kuball

    Leakage mechanisms in GaN-on-GaN vertical pn diodes

    Citation

    Rackauskas, B, Dalcanale, S, Uren, MJ, Kachi, T & Kuball, M, 2018, ‘Leakage mechanisms in GaN-on-GaN vertical pn diodes’. Applied Physics Letters, vol 112.

    Abstract

    Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

    Full details in the University publications repository