Dr James Pomeroy

Research summary

My main research interest is the application of optical spectroscopy to study the properties of III-nitride and boron-rich semiconductors, and devices based on these materials.

I also have an interest in electrical methods for device characterisation.

My previous work has included InN, B12As2 and AlGaN/GaN field effect transistors. Currently, I am helping to develop a novel time-resolved measurement technique for studying self-heating and other transient phenomena in electronic devices. We have been able to achieve sub-micron spatial resolution and nanosecond temporal resolution.

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Biography

2006-present: Post Doctoral Research Assistant, University of Bristol.
2002-2006: Physics PhD, University of Bristol.
1998-2002: Physics Msci, University of Bristol.

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Recent publications

• Middleton, C, Chandrasekar, H, Singh, M, Pomeroy, JW, Uren, MJ, Francis, D & Kuball, M, 2019, ‘Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices’. Applied Physics Express, vol 12.
• Chandrasekar, H, Uren, M, Casbon, MA, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M, 2019, ‘Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology’. IEEE Transactions on Electron Devices, vol 66., pp. 1681-1687

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View complete publications list in the University of Bristol publications system