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Mr Ben Rackauskas

Mr Ben Rackauskas

Mr Ben Rackauskas


Area of research

The challenges of gallium nitride power electronic devices

HH Wills Physics Laboratory,
Tyndall Avenue, Bristol BS8 1TL
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Research summary

GaN electronic devices are presently being developed for RF and power electronic applications. However, little is known about their reliability and the impact of buffer doping. We develop new experimental techniques to look at these aspects with projects including experimental and simulation components.

Of interest, is understanding how carbon doping impacts on the performance and reliability of the devices. Study of the charge transport through the epitaxial layers and comparison to device simulations enables a deeper physical insight into the devices. Ultimately this can predict the impact of traps and dislocations on the lateral transport in these lateral transistor devices ...

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Recent publications

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View complete publications list in the University of Bristol publications system

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