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Professor Judy Rorison
Professor Judy Rorison
B.Sc.(McG.), D.Phil.(Oxon.)
Professor of Optoelectronics
Summary
Judy Rorison is a member of the Optics Group within the Centre for Communications Research. The Group's research ranges from component to systems level, both experimental measurement and modelling. Facilities include a clean room, a focused ion beam facility, and an excellent device experimental kit. Grant income is in the region of £2.5M and the group has numerous links with national and international companies.
Keywords
- semiconductor devices
- edge-emitting and VCSELS
- modulators
- switches
Recent publications
- Vaughan, MP & Rorison, JM, 2018, Modeling spin relaxation in semiconductor quantum wells: Modifying the Elliot process. Semiconductor Science and Technology, vol 33.
- Xiong, W, Broderick, C & Rorison, J, 2018, Highly mismatched III-V semiconductor alloys applied in multiple quantum well photovoltaics. IET Optoelectronics, vol 12., pp. 15-19
- Vaughan, M & Rorison, J, 2018, Model expressions for the spin-orbit interaction and phonon-mediated spin dynamics in quantum dots. Semiconductor Science and Technology, vol 33.
- Broderick, C, Xiong, W, Sweeney, SJ, O'reilly, EP & Rorison, JM, 2018, Theory and design of InxGa1-xAs1-yBiy mid-infrared semiconductor lasers: Type-I quantum wells for emission beyond 3 μm on InP substrates. Semiconductor Science and Technology, vol 33.
- Wang, J, Xiong, W & Rorison, J, 2017, Enhancing the efficiency of the intermediate band solar cells by introducing: carrier losses, alloying and strain. IET Optoelectronics., pp. 38-43
- Broderick, CA, Jin, S, Marko, IP, Hild, K, Ludewig, P, Bushell, ZL, Stolz, W, Rorison, JM, O'reilly, EP, Volz, K & Sweeney, SJ, 2017, GaAs1-xBix /GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- & mid-infrared photonics. Scientific Reports, vol 7.
- Broderick, CA, Rorison, J, Marko, IP, Sweeney, SJ & O’Reilly, EP, 2016, GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 209-210
- Marko, IP, Broderick, CA, Jin, S, Ludewig, P, Stolz, W, Volz, K, Rorison, J, O’Reilly, EP & Sweeney, SJ, 2016, Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports, vol 6.
- Broderick, CA, Xiong, W, Sweeney, SJ, O’Reilly, EP & Rorison, JM, 2016, Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. in: 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), pp. 201-204
- Broderick, CA, Xiong, W & Rorison, JM, 2016, Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 47-48
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