Professor Judy Rorison

Summary

Judy Rorison is a member of the Optics Group within the Centre for Communications Research. The Group's research ranges from component to systems level, both experimental measurement and modelling. Facilities include a clean room, a focused ion beam facility, and an excellent device experimental kit. Grant income is in the region of £2.5M and the group has numerous links with national and international companies.

Keywords

• semiconductor devices
• edge-emitting and VCSELS
• modulators
• switches

Memberships

Organisations

Department of Electrical & Electronic Engineering

Other sites

• Eeng

Research Groups

• Photonics - Core
• Smart Internet Lab - Core

Recent publications

• Broderick, CA, Jin, S, Marko, IP, Hild, K, Ludewig, P, Bushell, ZL, Stolz, W, Rorison, JM, O'reilly, EP, Volz, K & Sweeney, SJ, 2017, ‘GaAs_1-xBi_x /GaN_yAs_1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- & mid-infrared photonics’. Scientific Reports, vol 7.
• Marko, IP, Broderick, CA, Jin, S, Ludewig, P, Stolz, W, Volz, K, Rorison, J, O’Reilly, EP & Sweeney, SJ, 2016, ‘Optical gain in GaAsBi/GaAs quantum well diode lasers’. Scientific Reports, vol 6.
• Broderick, CA, Xiong, W, Sweeney, SJ, O’Reilly, EP & Rorison, JM, 2016, ‘Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers’. in: 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), pp. 201-204
• Broderick, CA, Rorison, J, Marko, IP, Sweeney, SJ & O’Reilly, EP, 2016, ‘GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment’. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 209-210
• Broderick, CA, Xiong, W & Rorison, JM, 2016, ‘Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers’. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 47-48
• Wang, Q-Y & Rorison, J, 2015, ‘Impact of realistic energy levels on the efficiency of intermediate Band Solar Cells: Impact of carrier loss’. in: 17th International Conference on Transparent Optical Networks (ICTON). Institute of Electrical and Electronics Engineers (IEEE), pp. 1
• Wang, Q-Y & Rorison, J, 2014, ‘Modelling of quantum dot intermediate band solar cells: effect of intermediate and linewidth broadening’. IET Optoelectrons, vol 8., pp. 81-87
• Sun, X, Vogiatzis, N & Rorison, JM, 2013, ‘Modeling Dilute Nitride 1.3 mu m Quantum Well Lasers: Incorporation of N Compositional Fluctuations’. IEEE Journal on Selected Topics in Quantum Electronics, vol 19.
• Sun, X, Vogiatzis, N & Rorison, JM, 2013, ‘Tailoring broadband gain incorporating quantum dot fluctuations for a GaInNAs semiconductor optical amplifier’. in: S Calvez, J Rorison, M Guina, D Alexandropoulos, N Balkan (eds) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4. Wiley - VCH Verlag GmbH, WEINHEIM, pp. 573-576
• Sun, X, Vogiatzis, N & Rorison, JM, 2013, ‘Theoretical Study on Dilute Nitride 1.3 mu m Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations’. IEEE Journal of Quantum Electronics, vol 49.

View complete publications list in the University of Bristol publications system