Professor Judy Rorison

Summary

Judy Rorison is a member of the Optics Group within the Centre for Communications Research. The Group's research ranges from component to systems level, both experimental measurement and modelling. Facilities include a clean room, a focused ion beam facility, and an excellent device experimental kit. Grant income is in the region of £2.5M and the group has numerous links with national and international companies.

Keywords

• semiconductor devices
• edge-emitting and VCSELS
• modulators
• switches

Memberships

Organisations

Department of Electrical & Electronic Engineering

Other sites

• Eeng

Research Groups

• Photonics - Core
• Smart Internet Lab - Core

Links

• Smart Internet Lab
• Photonics

Recent publications

• Broderick, CA, Xiong, W, Sweeney, SJ, O'Reilly, EP & Rorison, JM, 2018, ‘Theory and design of In_xGa_1-xAs_1-yBi_y mid-infrared semiconductor lasers: Type-I quantum wells for emission beyond 3 μm on InP substrates’. Semiconductor Science and Technology, vol 33.
• Vaughan, M & Rorison, J, 2018, ‘Model expressions for the spin-orbit interaction and phonon-mediated spin dynamics in quantum dots’. Semiconductor Science and Technology, vol 33.
• Vaughan, MP & Rorison, JM, 2018, ‘Modeling spin relaxation in semiconductor quantum wells: Modifying the Elliot process’. Semiconductor Science and Technology, vol 33.
• Xiong, W, Broderick, C & Rorison, J, 2018, ‘Highly mismatched III-V semiconductor alloys applied in multiple quantum well photovoltaics’. IET Optoelectronics, vol 12., pp. 15-19
• Broderick, CA, Jin, S, Marko, IP, Hild, K, Ludewig, P, Bushell, ZL, Stolz, W, Rorison, JM, O'reilly, EP, Volz, K & Sweeney, SJ, 2017, ‘GaAs_1-xBi_x /GaN_yAs_1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- & mid-infrared photonics’. Scientific Reports, vol 7.
• Wang, J, Xiong, W & Rorison, J, 2017, ‘Enhancing the efficiency of the intermediate band solar cells by introducing: carrier losses, alloying and strain’. IET Optoelectronics., pp. 38-43
• Broderick, CA, Rorison, J, Marko, IP, Sweeney, SJ & O’Reilly, EP, 2016, ‘GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment’. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 209-210
• Marko, IP, Broderick, CA, Jin, S, Ludewig, P, Stolz, W, Volz, K, Rorison, J, O’Reilly, EP & Sweeney, SJ, 2016, ‘Optical gain in GaAsBi/GaAs quantum well diode lasers’. Scientific Reports, vol 6.
• Broderick, CA, Xiong, W, Sweeney, SJ, O’Reilly, EP & Rorison, JM, 2016, ‘Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers’. in: 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), pp. 201-204
• Broderick, CA, Xiong, W & Rorison, JM, 2016, ‘Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers’. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 47-48

View complete publications list in the University of Bristol publications system