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Publication - Professor Judy Rorison

    GaAs-based dilute bismide semiconductor lasers

    Theory vs. experiment

    Citation

    Broderick, CA, Rorison, J, Marko, IP, Sweeney, SJ & O’Reilly, EP, 2016, ‘GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment’. in: 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), pp. 209-210

    Abstract

    We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.

    Full details in the University publications repository