Unit name | Radio Frequency Engineering 4 |
---|---|
Unit code | EENGM6501 |
Credit points | 10 |
Level of study | M/7 |
Teaching block(s) |
Teaching Block 1 (weeks 1 - 12) |
Unit director | Professor. Morris |
Open unit status | Not open |
Pre-requisites |
None |
Co-requisites |
None |
School/department | Department of Electrical & Electronic Engineering |
Faculty | Faculty of Engineering |
The aim is to provide an introduction to the theoretical and practical aspects of RF and microwave circuit design. This includes a detailed study of RF transistor amplifier design, covering RF transistor behaviour and selection; Smith Chart design of small-signal amplifiers using lumped-element and stub matching techniques; and RF power amplification and linearity considerations in RF systems.
Elements
RF & Microwave Techniques Dr K.A. Morris
Components at RF, resonant circuits; Q factor, Fixed Q, High Q and low Q impedance matching; Semiconductors at RF and BJT models at RF; s-parameters.
Small-signal RF amplifier design: bias networks, stability and matching.
Smith chart matching network design.
Amplifier design using Smith charts: stability, gain control and matching network design.
Low-noise design: choice of bias point and noise figure.
Principles of microwave systems; microwave amplifier design; Transmitter architectures; Amplifier distortion: modelling, intercept point, harmonic and inter-modulation distortion.
Large-signal RF amplifier types and classes.
Having completed this unit, students will be able to:
Combination of lectures and laboratory sessions
Terminal Exam 80%: 2 hour written paper