| Unit name | Semiconductor Physics |
|---|---|
| Unit code | PHYSM2100 |
| Credit points | 10 |
| Level of study | M/7 |
| Teaching block(s) |
Teaching Block 2 (weeks 13 - 24) |
| Unit director | Dr. Sarua |
| Open unit status | Not open |
| Pre-requisites | |
| Co-requisites |
None |
| School/department | School of Physics |
| Faculty | Faculty of Science |
To show how the transport properties of semiconductors may be exploited to create electronic devices and to explain how they function. To demonstrate the importance of semiconductor devices in fundamental research. To show how the optical properties of semiconductors may be used to create light-emitting diodes and lasers.
Aims:
To show how the transport properties of semiconductors may be exploited to create electronic devices and to explain how they function. To demonstrate the importance of semiconductor devices in fundamental research. To show how the optical properties of semiconductors may be used to create light-emitting diodes and lasers.
Outline syllabus:
Junctions (6): Intrinsic semiconductors. Doping of semiconductors. Carrier density and mobility. The p-n junction. Band bending. Carrier diffusion, generation and recombination. Shockley equation. Depletion layer capacitance. Reverse breakdown. Transient behaviour. Noise. Heterojunctions. Metal-semiconductor junction. Ohmic and Schottky contacts. Device fabrication (growth, photolithography, etching).
Optoelectronics (5): Optical properties of semiconductors. Quantum wells. Quantum dots. Carrier confinement. Light confinement. Homojunction and heterojunction LEDs. Internal loss mechanisms. Encapsulation. Light output characteristics. Wall-plug-efficiency. Semiconductor laser diodes. Stimulated emission. Gain. Threshold current. Double heterostructure laser diode. Separate confinement heterostructure laser diode. Vertical cavity surface emitting laser.
Transistors (5): Principles of bipolar transistor and field effect transistor (FET). PNP and NPN transistor. Thyristor. JFETs, MESFETs, MOSFETs and HEMTs. Static characteristic. Switching. Simple applications. The 2D electron gas (1): The quantum Hall effect.
Device reliability (1): Basic concepts.
Able to calculate band profiles at semiconductor-semiconductor and metal-semiconductor junctions. Able to explain I-V characteristics for semiconductor junctions. Understand the behaviour of simple electronic devices. Able to explain working of simple optoelectronic devices. Understand quantised electron transport in 2D electron gas.
The unit will be taught through a combination of
Formative Assessment:
Problem sheets provide formative feedback.
Summative Assessment:
A final 2 hour written examination.
If this unit has a Resource List, you will normally find a link to it in the Blackboard area for the unit. Sometimes there will be a separate link for each weekly topic.
If you are unable to access a list through Blackboard, you can also find it via the Resource Lists homepage. Search for the list by the unit name or code (e.g. PHYSM2100).
How much time the unit requires
Each credit equates to 10 hours of total student input. For example a 20 credit unit will take you 200 hours
of study to complete. Your total learning time is made up of contact time, directed learning tasks,
independent learning and assessment activity.
See the Faculty workload statement relating to this unit for more information.
Assessment
The Board of Examiners will consider all cases where students have failed or not completed the assessments required for credit.
The Board considers each student's outcomes across all the units which contribute to each year's programme of study. If you have self-certificated your absence from an
assessment, you will normally be required to complete it the next time it runs (this is usually in the next assessment period).
The Board of Examiners will take into account any extenuating circumstances and operates
within the Regulations and Code of Practice for Taught Programmes.
