Center for Device Thermography and Reliability
The Center for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball is a world-leading research center focusing on improving the thermal management, electrical performance and reliability of novel devices, circuits and packaging.
Probing RF properties of GaN-based devices
We are hiring!
We have a PhD Studentship available, (UK, European and international students are eligible; start date 2021) in thermal management research of ultra-wide band gap semiconductors, associated with the DOE ULTRA centre we are involved with- if you are (or know someone who is) interested please get in touch: Martin.Kuball@bristol.ac.uk.
Professor Martin Kuball named as Royal Academy of Engineering Chair in Emerging Technologies
Professor Kuball is one of eight engineering academics across the UK to receive support from the Royal Academy of Engineering’s largest research funding scheme—the Chairs in Emerging Technologies – which has allocated a total of £22 million to support these innovative researchers and global leaders in their fields whose projects made it through the rigorous selection process in the face of stiff competition.
For his project as Chair, ‘Ultra-wide bandgap emerging power electronics for a low-carbon economy’, Professor Kuball aims to develop a new class of semiconductor power electronic devices using ultra-wide bandgap materials such as gallium oxide, boron nitride and aluminium nitride. Thanks to the outstanding properties of these materials, the new devices will be compact, highly versatile and energy efficient. This new generation of power electronics is the key to transforming a wide range of real-life applications, from data centres and motor drives to electric vehicle chargers to smart grids, all contributing to the realisation of a greener society.
Why do we exist?
In today's fast-moving technological world, semiconductor devices need more ‘muscle power’, but devices must not overheat. It is projected that the next generation of wireless architecture (5G) will increase data communciation speeds to multiple times that of existing 4G. Semiconductors enable this wireless architecture. Today's devices run too hot, wasting energy and giving them a short operating life time.
If we use today’s technology, by 2035 the planet’s datacentres will cover 6 x the land area of the M25 and use over 40% of global energy production. Artificial Intelligence (AI) will become the biggest single contributor to climate change. Better semiconductors can help mitigate this. The world needs new devices which are more energy efficient, that can also run at high powers. This is what we aim to achieve in the CDTR.
To achieve this goal, since 2001 we have been developing and applying new techniques for temperature, thermal conductivity, electrical conductivity and traps analysis, especially for microwave and power electronic semiconductor devices, made of wide bandgap materials, such as GaN, SiC, Gallium Oxide and diamond. Our team of about 20 international researchers and PhD students works with industry and academia from across the globe to develop the next generation of technology for communications, microwave and power electronics to enable the low carbon economy.
- Mapping of temperature fields in GaAs MMIC HPA modules
- Electrical device characterization
- Reliability and failure analysis of AF & power electronic devices
- Device electrical and thermal modelling
- Measurements of junction temperature in AlGaN/GaN HFETs during operation for accelerated life time tests
- Thermal resistance in heteroepitaxial device structures. Examples include: GaN on SiC, Si and diamond